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SiC and GaN Power Devices Market Size By Application, Industry Analysis Reports, Regional Outlook (North America, Europe, Asia Pacific, Middle East & Africa, And South America), Growth Potential, Price Trends, Competitive Market Shares & Forecast 2023 - 2030

ID : MRU_24826 | Date : Jan, 2023 | Pages : 192 | Region : Global

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Wide-bandgap semiconductors (WBG or WBGS) are semiconductor materials which have a relatively large band gap compared to typical semiconductors. Silicon Carbide (SiC) and gallium nitride (GaN) Power Devices are the mainly used Wide-bandgap semiconductors materials.
Infineon is the largest production Cmpany for SiC & GaN Power Devices, with a production value market share nearly 49.01% in 2016.
SiC & GaN Power Devices used in industry including Consumer Electronics, Automotive & Transportation, Industrial Use and Others. Report data showed that 34.05% of the SiC & GaN Power Devices market demand in Industrial Use, 28.76% in Consumer Electronics in 2016.
There are two kinds of SiC & GaN Power Devices, which are SiC and GaN Power Devices. SiC Power Devices is important in the SiC & GaN Power Devices, with a production revenue market share nearly 91.40% in 2016.
Briefly speaking, in the next few years, SiC & GaN Power Devices industry will be a rapid development industry. Sales of SiC & GaN Power Devices have brought a lot of opportunities, there will more companies enter into this industry, especially in developing countries.

The Global SiC and GaN Power Devices Market was valued at xxx million USD with a CAGR xx% from 2018-2022. Subsequently, it will touch xxx million USD in 2023 with a CAGR xx % from 2023 - 2030.

In the global SiC and GaN Power Devices Market, This report focuses particularly in North America, South America, Europe and Asia-Pacific, and Middle East and Africa. This report classifies the Market on the basis of application, type, regions, and manufactures.

In Market segmentation by manufacturers, the report covers the following companies-

Infineon
Rohm
Mitsubishi
STMicro
Fuji
Toshiba
Microsemi
United Silicon Carbide Inc.
GeneSic
Efficient Power Conversion (EPC)
GaN Systems
VisIC Technologies LTD

In Market segmentation by geographical regions, the report has analysed the following regions-
North America (USA, Canada and Mexico)
Europe (Germany, France, UK, Russia and Italy)
Asia-Pacific (China, Japan, Korea, India and Southeast Asia)
South America (Brazil, Argentina, Columbia etc.)
Middle East and Africa (Saudi Arabia, UAE, Egypt, Nigeria and South Africa)

In Market segmentation by types :

GaN
SiC
In Market segmentation by applications :

Consumer Electronics
Automotive & Transportation
Industrial Use
Others

The research provides answers to the following key questions:
• What is the estimated growth rate and Market share and size of the SiC and GaN Power Devices Market for the forecast period 2023 - 2030?
• What are the driving forces in the SiC and GaN Power Devices Market for the forecast period 2023 - 2030?
• Who are the prominent Market players and how have they gained a competitive edge over other competitors?
• What are the Market trends influencing the progress of the SiC and GaN Power Devices industry worldwide?
• What are the major challenges and threats restricting the progress of the industry?
• What opportunities does the Market hold for the prominent Market players?
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