Silicon carbide (SiC), also known as carborundum, is a compound of silicon and carbon with chemical formula SiC. Silicon carbide is a semiconductor, which can be doped n-type by nitrogen or phosphorus and p-type by beryllium, boron, aluminium, or gallium. Metallic conductivity has been achieved by heavy doping with boron, aluminium or nitrogen.SiC Substrates is a semiconductor material with unique electrical properties and excellent thermal properties , compared to silicon wafer and gallium arsenide wafer , SiC is more suitable for high temperatureand high power device .SiC Substrates can be supplied in diameter 2 inch , both 4-H or 6-H polytype N-type , Nitrogent doped , and Si face polished. It can be used in GaN epitaxy device, Optoelectronic device, High frequency device, High power device, High temperature device, Light emitting diodes.
Currently, the global SiC wafer market is expensive, but still in short supply, high raw material costs 40 percent more than the price of silicon carbide semiconductor device, silicon carbide wafer price has become the bottleneck of the third-generation semiconductor industry. Thus, using the most advanced SiC crystal growth technology to achieve large-scale production, reduce production costs of silicon carbide wafers, will promote the rapid development of the third generation of the semiconductor industry, expanding market demand.
With SiC crystal growth and device fabrication technology to further improve the technology. The next few years a variety of SiC power electronic devices will get greater improvements in yield, reliability and price. To enter the stage of full promotion applications. This is likely to lead to a new power electronics technology revolution. Thus, the birth and development of SiC power electronic devices is a revolutionary progress in power electronics technology
The main application areas of silicon carbide wafers with LED solid-state lighting and high-frequency devices, the future of mobile phones and laptop backlight market will provide tremendous growth in demand for silicon carbide

The Global SiC Substrates Market size was xxx million USD with a CAGR xx % from 2018- 2022. It will stretch to xxx million USD in 2023 with a CAGR of xx % from 2023 - 2030.

As the report focuses on global SiC Substrates Market, mainly in Europe and Asia Pacific, North America, Middle East and Africa, and South America. This report segmented the Market on the basis of regions, manufacturers, applications, and type.

in addition, this report introduces Market competition situation among the vendors and company profile, besides, Market price analysis and value chain features are covered in this report.

In Market segmentation by manufacturers, the report covers the following companies-

Cree (Wolfspeed)
ROHM (sicrystal)
II‐VI Advanced Materials
Dow Corning
NSSMC
SICC Materials
TankeBlue Semiconductor
Norstel

In Market segmentation by geographical regions, the report has analyzed the following regions-
North America (USA, Canada and Mexico)
Europe (Germany, France, UK, Russia and Italy)
Asia-Pacific (China, Japan, Korea, India and Southeast Asia)
South America (Brazil, Argentina, Columbia etc.)
Middle East and Africa (Saudi Arabia, UAE, Egypt, Nigeria and South Africa)

In Market segmentation by types covers:

Semi-insulating SiC Substrates
Conductive SiC Substrates
In Market segmentation by applications :

IT & Consumer
LED lighting
Automotive
Industry

Apart from the drivers, restraints, and opportunities, the report also offers competitive landscape, including various growth strategies adopted by profiled players for establishing significant position in the industry. The segmentation included in the comprehensive report will help respectable manufacturers to set up their processing units in the regions and increase their global presence. This would also benefit the industry and increase the company\'s product portfolio.

The research provides answers to the following key questions:
• What is the estimated growth rate and Market share and size of the SiC Substrates Market for the forecast period 2023 - 2030?
• What are the driving forces in the SiC Substrates Market for the forecast period 2023 - 2030?
• Who are the prominent Market players and how have they gained a competitive edge over other competitors?
• What are the Market trends influencing the progress of the SiC Substrates industry worldwide?
• What are the major challenges and threats restricting the progress of the industry?
• What opportunities does the Market hold for the prominent Market players?
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Note – In order to provide more accurate market forecast, all our reports will be updated before delivery by considering the impact of COVID-19.

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