Ferroelectric RAM Market Size By Regional Analysis(Europe, Asia Pacific, America, Middle East And Africa), By Demand & COVID-19 Impact Analysis, By Type, By Applications And Forecasts 2023 - 2030
Report Overview
The market research report is created with a compilation of analytical research based on historic records, current statistics, and future predictions. The report contains details on the leading players operating in the Ferroelectric RAM market including various factors related to and dependent influencing the market growth.
Ferroelectric RAM (FeRAM, F-RAM or FRAM) is a random-access memory similar in construction to DRAM but utilizing a ferroelectric layer instead of a dielectric layer to achieve non-volatility. FeRAM is one of a growing number of alternative non-volatile random-access memory technologies which can offer that same functionality as flash memory.
FeRAM consists of a grid of small capacitors and associated wiring and signling transistors. Each storage element, a cell, consists of one capacitor and one transistor. Unlike the DRAM use a linear dielectric in its cell capacitor, dielectric structure in the FeRAM cell capacitor usually contains ferroelectric material, typically lead zirconate titanate (PZT).
A ferroelectric material has a nonlinear relationship between the applied electric field and the apparent stored charge. The ferroelectric characteristic has the form of a hysteresis loop, which is very similar in shape to the hysteresis loop of ferromagnetic materials. The dielectric constant of a ferroelectric is typically much higher than that of a linear dielectric because of the effects of semi-permanent electric dipoles formed in the crystal structure of the ferroelectric material. When an external electric field is applied across a dielectric, the dipoles tend to align themselves with the field direction, produced by small shifts in the positions of atoms and shifts in the distributions of electronic charge in the crystal structure. After the charge is removed, the dipoles retain their polarization state. Binary 0s and 1s are stored as one of two possible electric polarizations in each data storage cell. For example, in the figure a 1 is encoded using the negative remnant polarization -Pr, and a 0 is encoded using the positive remnant polarization +Pr.In terms of operation, FeRAM is similar to DRAM. Writing is accomplished by applying a field across the ferroelectric layer by charging the plates on either side of it, forcing the atoms inside into the up or down orientation (depending on the polarity of the charge), thereby storing a 1 or 0. Reading, however, is somewhat different than in DRAM. The transistor forces the cell into a particular state, say 0. If the cell already held a 0, nothing will happen in the output lines. If the cell held a 1, the re-orientation of the atoms in the film will cause a brief pulse of current in the output as they push electrons out of the metal on the down side. The presence of this pulse means the cell held a 1. Since this process overwrites the cell, reading FeRAM is a destructive process, and requires the cell to be re-written if it was changed.
Ferroelectric RAM was proposed by MIT graduate student Dudley Allen Buck in his masters thesis, Ferroelectrics for Digital Information Storage and Switching, published in 1952. Development of FeRAM began in the late 1980s. Work was done in 1991 at NASAs Jet Propulsion Laboratory on improving methods of read out, including a novel method of non-destructive readout using pulses of UV radiation. Much of the current FeRAM technology was developed by Ramtron, a fabless semiconductor company. One major licensee is Fujitsu, who operates what is probably the largest semiconductor foundry production line with FeRAM capability. Since 1999 they have been using this line to produce standalone FeRAMs, as well as specialized chips (e.g. chips for smart cards) with embedded FeRAMs. Fujitsu produced devices for Ramtron until 2010. Since 2010 Ramtrons fabricators have been TI (Texas Instruments) and IBM. Since at least 2001 Texas Instruments has collaborated with Ramtron to develop FeRAM test chips in a modified 130 nm process. In the fall of 2005, Ramtron reported that they were evaluating prototype samples of an 8-megabit FeRAM manufactured using Texas Instruments FeRAM process. Fujitsu and Seiko-Epson were in 2005 collaborating in the development of a 180 nm FeRAM process. In 2012 Ramtron was acquired by Cypress Semiconductor. FeRAM research projects have also been reported at Samsung, Matsushita, Oki, Toshiba, Infineon, Hynix, Symetrix, Cambridge University, University of Toronto, and the Interuniversity Microelectronics Centre (IMEC, Belgium).
The Ferroelectric RAM market was valued at 240 Million US$ in 2020 and is projected to reach 300 Million US$ by 2030, at a CAGR of 3.0% during the forecast period. In this study, 2023 has been considered as the base year and 2023 to 2030 as the forecast period to estimate the market size for Ferroelectric RAM.
The report is prepared using analytical methods such as SWOT (strengths, weaknesses, opportunities, and threats)) analysis, PESTEL Analysis, Porter\'s Five Force Analysis, and value chain analysis. These methods provide a clear view of the market structure and analyze competition at a global level. They also provide detailed information on each segment in the global Ferroelectric RAM market.
The aim of the report is to interpret the market sizes of various segments and countries for the forecast period. The study includes the qualitative and quantitative analysis of the market. The report analyses the Ferroelectric RAM market on a regional and global level with a deep analysis of macro-and micro-economic factors impacting the growth of the market. This report also includes market information related to the latest industry trends, market developments, and analysis of products and end users contributing to market growth. An in-depth study of the current market scenario, major driving factors, and restraining factors for the market are also included in the report.
The Ferroelectric RAM market report includes information related to market segmentation, market size and revenue forecasts, and regional forecasts along with information about the leading market players operating in the market, company revenue shares and, their recent developments. The market is classified regionally on country-level into North America, Europe, Asia Pacific, the Middle East and Africa, and South America.
Scope of the Ferroelectric RAM Market:
The major competitors working in the market are:
, Cypress Semiconductor, Fujitsu, Texas Instruments, IBM, Infineon
Market by Order Type
Serial Memory
Parallel Memory
Others
Ferroelectric RAM Data by Application
Smart Meters
Automotive Electronics
Medical Devices
Wearable Devices
Ferroelectric RAM Regions Covered in the Report are:
- North America
- Europe
- Asia Pacific
- Middle East & Africa
- Rest of the World
The information about the Ferroelectric RAM market is obtained from several sources such as company websites, journals, annual reports, which were then assessed and verified by the industry experts. The information is represented in the form of diagrams, charts, pie charts, and infographics, which helps in a better understanding of the market.
Objectives of Ferroelectric RAM Market Report:
- To analyze the factors driving the market growth including supply chain analysis, price analysis along with other analytical methods
- To provide an in-depth analysis of the Ferroelectric RAM market with information on various segment and sub-segments
- To provide a regional analysis and global analysis for the Ferroelectric RAM market size and their forecasts
- To provide strategic profiles of the key players operating in the Ferroelectric RAM market, their key competencies, and market competition
- To provide a competitive scenario about the key factors driving, restraining, and challenging the market growth.
- The impact of COVID-19 pandemic on the Ferroelectric RAM market
Target Audiences for Ferroelectric RAM Market:
- Investors
- Investment Bankers
- Key Consulting Companies and Advisors
- Venture Capitalists
- Large, Medium-sized, and Small enterprises
Customization:
We also provide customized reports according to customer\'s specific requirements. We also provide customization for regional and country-level reports individually.
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